GaSe

Investigating the Optical Study of Electrodeaposited GaSe thin film at Different Temperatures (Published)

The GaSe thin films have been obtained by cathodic electrodeposition technique onto the fluorine tin oxide (FTO) glass substrates from aqueous acidic solutions at various temperatures of 323⁰K, 333⁰K, 343⁰K, and 3530K. UV-VIS spectrophotometer was used to measure the optical absorption of GaSe thin film at their temperature variations. The optical study illustrated that the direct energy band gap of 3.0 eV, 3.0 eV, 2.8 eV, and 4.0 eV were appraised for electrodeposited GaSe thin film layers at different temperatures of 323 ⁰K, 333 ⁰K, 343 ⁰K and 353 ⁰K respectively. The thickness of the thin film layers increases along with the increase of electrodeposited temperature.

Citation: Olusola O.O., Awodun A. O., and Aladejana A. L. (2021) Investigating the Optical Study of Electrodeaposited GaSe thin film at Different Temperatures, International Research Journal of Pure and Applied Physics, Vol.8, No.2, pp.36-43

 

 

Keywords: GaSe, Temperature, electrodeposition technique, optical study